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Revision as of 03:25, 29 October 2019
Ion simulation application
This application simulates the secondary ion mass spectrometry (SIMS) process. It bombards the substrate atoms with a projectile of high energy. It then follows this trajectory through the crystal and calculates the amount of energy imparted to the surface. This information can be used to determine how the atoms of the surface will eject from it. By measuring these ejected ions one can gain information on surface structure. It also reveals surface composition as this technique is mass sensitive.
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Author: Alger Pike